vishay BAS40 to BAS40-06 document number 85701 rev. 1.4, 14-oct-03 vishay semiconductors www.vishay.com 1 18435 12 3 12 3 12 3 12 3 top view top view BAS40-05 BAS40-06 BAS40-04 BAS40 schottky diodes features ? these diodes feature very low turn-on voltage and fast switching. these devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. mechanical data case: sot-23 plastic package weight: approx. 8 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout on next page thermal characteristics t amb = 25 c, unless otherwise specified 1) device on fiberglass substrate, see layout on next page. part ordering code marking remarks BAS40 BAS40-gs18 or BAS40-gs08 43 tape and reel BAS40-04 BAS40-04-gs18 or BAS40-04-gs08 44 tape and reel BAS40-05 BAS40-05-gs18 or BAS40-05-gs08 45 tape and reel BAS40-06 BAS40-06-gs18 or BAS40-06-gs08 46 tape and reel parameter test condition symbol value unit repetitive peak reverse voltage v rrm = v rwm = v r 40 v forward continuous current t amb = 25 c i f 200 1) ma surge forward current t p < 1 s, t amb = 25 c i fsm 600 1) ma power dissipation 1) t amb = 25 c p tot 200 1) mw parameter test condition symbol value unit thermal resistance junction to ambient air r ja 430 1) c junction temperature t j 150 c storage temperature range t s - 55 to +150 c
www.vishay.com 2 document number 85701 rev. 1.4, 14-oct-03 vishay BAS40 to BAS40-06 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified layout for r ja test thickness: - fiberglass 0.059 in. (1.5 mm) - copper leads 0.012 in. (0.3 mm) parameter test condition symbol min ty p. max unit reverse breakdown voltage i r = 10 a (pulsed) v (br) 40 v leakage current pulse test v r = 30 v, t p < 300 s i r 20 100 na forward voltage pulse test t p < 300 s, i f = 1.0 ma v f 380 mv pulse test t p < 300 s, i f = 40 ma, v f 1000 mv capacitance v r = 0 v, f = 1 mhz c tot 4.0 5 pf reverse recovery time i f = 10 ma, i r = 10 ma, i rr = 1 ma, r l = 100 ? t rr 5 ns 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2)
vishay BAS40 to BAS40-06 document number 85701 rev. 1.4, 14-oct-03 vishay semiconductors www.vishay.com 3 package dimensions in mm (inches) mounting pad layout 1 2 3 .102 ( 2.6) .094 ( 2.4) top view 17418 2.8 (.110) 3.1 (.122) 0.4 (.016) 0.95 (.037) 0.95 (.037) max 0.1 (.004) 1.33 (.052) 1.43 (.056) 0.4 (.016) 0.4 (.016) 0.125 (.005) 0.175 (.007) 0.95 (.037) 1.15 (.045) iso method a 2.0 (0.079) 0.9 (0.035) 0.95 (0.037) 0.95 (0.037) 17417 0.8 (0.031)
www.vishay.com 4 document number 85701 rev. 1.4, 14-oct-03 vishay BAS40 to BAS40-06 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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